Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for LEDs. This mainly due to large barriers vertical carrier transport caused by total polarization discontinuity at multiple quantum well barrier interfaces. The natural random alloy fluctuation in QWs has proven be an important factor reducing $V_\text{for}$. However, this does not suffice case of LEDs because their polarization-induced barrier. V-defects have been proposed as another key allow laterally injection into wells (MQWs), thus bypassing energy incurred transport. In paper, model whole LED, we consider both random-alloy V-defect effects. A fully two-dimensional drift-diffusion charge-control solver used results indicate that turn-on voltages are affected fluctuations density. LEDs, decreases more V-defects, where smaller sidewall major path lateral injection. Finally, discuss how density size affects results.